Effect of growth temperature on the thermal stability of 1.3μm InAs/InGaAs/GaAs quantum dot structures

Author

Ngo, C.Y. ; Yoon, S.F. ; Lim, C.S. ; Wong, Vincent ; Chua, S.J.

Author_Institution

Nanyang Technol. Univ., Singapore

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

3

Abstract

The effects of growth temperature on the optical properties of InAs/InGaAs/GaAs quantum dot (QD) structure were investigated at the important temperature range of 25degC to 80degC. Results from QD samples grown at low growth temperature of 450degC suggest better thermal stability as compared to that grown at 510degC. This work suggests the feasibility of obtaining better thermal stability at a low growth temperature for InAs/InGaAs/GaAs QD structures.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum dots; thermal stability; InAs-InGaAs-GaAs; growth temperature; molecular beam epitaxy; optical properties; photoluminescence; quantum dot structure; temperature 25 degC to 80 degC; temperature 510 degC; thermal stability; Gallium arsenide; Indium gallium arsenide; Land surface temperature; Molecular beam epitaxial growth; Optical buffering; Quantum dot lasers; Quantum dots; Stationary state; Temperature distribution; Thermal stability; InAs/InGaAs/GaAs; growth temperature; quantum dots (QDs); thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702946

Filename

4702946