• DocumentCode
    1812608
  • Title

    Comparative study of W-plug, Al-plug and Al-dual damascene for 0.18 μm ULSI multilevel interconnect technologies

  • Author

    Kikuta, K. ; Takewaki, T. ; Kakuhara, Y. ; Fujii, K. ; Hayashi, Y.

  • Author_Institution
    NEC Corp., Sagamihara, Japan
  • fYear
    1998
  • fDate
    1-3 Jun 1998
  • Firstpage
    140
  • Lastpage
    142
  • Abstract
    Comparative studies of W-plug, Al-plug and Al dual damascene were carried out for 0.18 μm ULSI multilevel interconnects. The via resistance of Al dual damascene was one-fourth of that of W-plug. Al dual damascene interconnects were found to have misalignment tolerance. The electromigration lifetime of Al dual damascene was 4 times longer than that of conventional W-plug, even though lithography misalignment occurred between the vias and the trench wiring. We developed highly reliable Al dual damascene interconnect technology with 0.56 μm pitch for 0.18 μm design rule ULSIs
  • Keywords
    ULSI; aluminium; electric resistance; electromigration; integrated circuit design; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; isolation technology; lithography; position control; tungsten; 0.18 micron; 0.56 micron; Al; Al dual damascene interconnect misalignment tolerance; Al dual damascene interconnect reliability; Al dual damascene interconnect technology; Al-dual damascene ULSI multilevel interconnects; Al-plug ULSI multilevel interconnects; IC design rules; ULSI multilevel interconnect technology; ULSI multilevel interconnects; ULSIs; W; W-plug ULSI multilevel interconnects; electromigration lifetime; lithography misalignment; trench wiring; via resistance; vias; Dielectric films; Electromigration; Etching; Fabrication; Laboratories; Metallization; Plugs; Silicon compounds; Ultra large scale integration; Wiring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    0-7803-4285-2
  • Type

    conf

  • DOI
    10.1109/IITC.1998.704773
  • Filename
    704773