Title :
Comparative study of W-plug, Al-plug and Al-dual damascene for 0.18 μm ULSI multilevel interconnect technologies
Author :
Kikuta, K. ; Takewaki, T. ; Kakuhara, Y. ; Fujii, K. ; Hayashi, Y.
Author_Institution :
NEC Corp., Sagamihara, Japan
Abstract :
Comparative studies of W-plug, Al-plug and Al dual damascene were carried out for 0.18 μm ULSI multilevel interconnects. The via resistance of Al dual damascene was one-fourth of that of W-plug. Al dual damascene interconnects were found to have misalignment tolerance. The electromigration lifetime of Al dual damascene was 4 times longer than that of conventional W-plug, even though lithography misalignment occurred between the vias and the trench wiring. We developed highly reliable Al dual damascene interconnect technology with 0.56 μm pitch for 0.18 μm design rule ULSIs
Keywords :
ULSI; aluminium; electric resistance; electromigration; integrated circuit design; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; isolation technology; lithography; position control; tungsten; 0.18 micron; 0.56 micron; Al; Al dual damascene interconnect misalignment tolerance; Al dual damascene interconnect reliability; Al dual damascene interconnect technology; Al-dual damascene ULSI multilevel interconnects; Al-plug ULSI multilevel interconnects; IC design rules; ULSI multilevel interconnect technology; ULSI multilevel interconnects; ULSIs; W; W-plug ULSI multilevel interconnects; electromigration lifetime; lithography misalignment; trench wiring; via resistance; vias; Dielectric films; Electromigration; Etching; Fabrication; Laboratories; Metallization; Plugs; Silicon compounds; Ultra large scale integration; Wiring;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704773
