Title :
Ultra-fast lateral 600 V silicon PiN diode superior to SiC-SBD
Author :
Tsukuda, Masanori ; Imaki, Hironori ; Omura, Ichiro
Author_Institution :
Electron. Res. Group for Sustainability, ICSEAD, Kitakyushu, Japan
Abstract :
Ultra-fast silicon PiN diode is proposed by lateral structure with traps using silicon on insulator (SOI) substrate as shown in Fig. 1. The proposed lateral SOI silicon PiN diode achieved ultra-fast reverse recovery without waveform oscillation successfully. The proposed lateral SOI structure with traps will contributes to performance improvement of all of bipolar power devices including IGBT.
Keywords :
elemental semiconductors; p-i-n diodes; silicon; silicon-on-insulator; IGBT; SOI substrate; bipolar power devices; lateral SOI silicon PiN diode; lateral structure; silicon carbide-SBD; silicon-on-insulator; ultrafast reverse recovery; ultrafast-lateral silicon PiN diode; voltage 600 V; Electric fields; Oscillators; PIN photodiodes; Semiconductor diodes; Silicon; Silicon-on-insulator; Switches;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4799-2917-7
DOI :
10.1109/ISPSD.2014.6855968
