DocumentCode
181264
Title
Ultra-fast lateral 600 V silicon PiN diode superior to SiC-SBD
Author
Tsukuda, Masanori ; Imaki, Hironori ; Omura, Ichiro
Author_Institution
Electron. Res. Group for Sustainability, ICSEAD, Kitakyushu, Japan
fYear
2014
fDate
15-19 June 2014
Firstpage
31
Lastpage
34
Abstract
Ultra-fast silicon PiN diode is proposed by lateral structure with traps using silicon on insulator (SOI) substrate as shown in Fig. 1. The proposed lateral SOI silicon PiN diode achieved ultra-fast reverse recovery without waveform oscillation successfully. The proposed lateral SOI structure with traps will contributes to performance improvement of all of bipolar power devices including IGBT.
Keywords
elemental semiconductors; p-i-n diodes; silicon; silicon-on-insulator; IGBT; SOI substrate; bipolar power devices; lateral SOI silicon PiN diode; lateral structure; silicon carbide-SBD; silicon-on-insulator; ultrafast reverse recovery; ultrafast-lateral silicon PiN diode; voltage 600 V; Electric fields; Oscillators; PIN photodiodes; Semiconductor diodes; Silicon; Silicon-on-insulator; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location
Waikoloa, HI
ISSN
1943-653X
Print_ISBN
978-1-4799-2917-7
Type
conf
DOI
10.1109/ISPSD.2014.6855968
Filename
6855968
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