Title :
Aluminum dual damascene interconnects with low-κ intra/inter-level dielectric for reduced capacitance and low cost
Author :
Zhao, B. ; Feiler, D. ; Liu, Q.Z. ; Nguyen, C.H. ; Brongo, M. ; Kuei, J. ; Ramanathan, V. ; Wu, J. ; Zhang, H. ; Rumer, M. ; Biberger, M.A. ; Sachan, V. ; James, D.
Author_Institution :
Rockwell Semicond. Syst., Newport Beach, CA., USA
Abstract :
Aluminum dual damascene interconnects using a low dielectric constant (low-κ) material as intra/inter level dielectric have been successfully demonstrated. The low-κ material has led to significant reduction in both intra-level and inter-level capacitance in the dual damascene Al interconnect structures. In addition, low via resistance and good interconnect reliability characteristics have been observed in the low-cost Al/low-κ dual damascene interconnects.
Keywords :
aluminium; capacitance; dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; permittivity; Al; Al dual damascene interconnects; aluminum dual damascene interconnects; capacitance; dielectric constant; dual damascene Al interconnect structures; inter-level capacitance; interconnect cost; interconnect reliability; intra-level capacitance; low-k inter-level dielectric; low-k intra-level dielectric; via resistance; Aluminum; Application specific integrated circuits; Capacitance; Costs; Dielectric materials; Integrated circuit interconnections; Integrated circuit noise; Integrated circuit reliability; Sputter etching; Wiring;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704775
