• DocumentCode
    1812709
  • Title

    Hot electron transistors controlled by insulated gate with 70 NM-wide emitter

  • Author

    Saito, Hisashi ; Hino, Takahiro ; Miyamoto, Yasuyuki ; Furuya, Kazuhito

  • Author_Institution
    Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo
  • fYear
    2008
  • fDate
    25-29 May 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The emitter width of the hot electron transistor controlled by an insulated gate was reduced to 70 nm by an improved fabrication process. In a previous study, the observed output conductance was twofold higher than transconductance. In this study, the output conductance was reduced from 115 mS/mm to 20 mS/mm by the improved fabrication process and a clear current modulation was also confirmed.
  • Keywords
    hot electron transistors; insulated gate field effect transistors; current modulation; emitter; hot electron transistors; insulated gate; output conductance; size 70 nm; Ballistic transport; Electrodes; Electron emission; Fabrication; Insulation; Scanning electron microscopy; Transconductance; Transistors; Tungsten; Voltage; component; hot electron transistor; insulated gate; narrowing emitter;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
  • Conference_Location
    Versailles
  • ISSN
    1092-8669
  • Print_ISBN
    978-1-4244-2258-6
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2008.4702950
  • Filename
    4702950
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1812709