W-band low-noise amplifier with 50 nm In0.8GaP/In0.4AlAs/In0.35GaAs metamorphic HEMT

Author

Kim, Sung-Won ; Koh, Yu-Min ; Choi, Woo-Yeol ; Kim, Hyung-Tae ; Kwon, Young-Woo ; Seo, Kwang-Seok

Author_Institution

Dept. Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

3

Abstract

W-band low-noise amplifier (LNA) has been successfully demonstrated with 50 nm metamorphic HEMT (MHEMT) technologies. 50 nm MHEMT showed a g_m.max of 760 mS/mm, a f_T of 216 GHz, and a f_max of 400 GHz in spite of indium content of 35 % in the channel. W-band LNA with three-stage showed the small signal gain of 9.4plusmn1.8 dB from 40 GHz to 110 GHz. These results are well suited for high frequency applications.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; low noise amplifiers; In_0.8GaP-In_0.4AlAs-In_0.35GaAs; LNA; W-band low-noise amplifier; frequency 40 GHz to 110 GHz; high frequency; indium content; metamorphic HEMT; size 50 nm; small signal gain; Electric breakdown; Frequency; Gallium arsenide; Gold; HEMTs; Indium phosphide; Low-noise amplifiers; Substrates; Wet etching; mHEMTs; HEMT; T-gate; fT; fmax; metamorphic;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702951

Filename

4702951