Title :
Bit-error-rate measurement of GaInAsP/InP distributed reflector laser with wirelike active regions
Author :
Lee, SeungHun ; Ullah, Saeed Mahmud ; Shindo, Takahiko ; Davis, Kyle Spencer ; Nishiyama, Nobuhiko ; Arai, Shigehisa
Author_Institution :
Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol., Tokyo
Abstract :
Dynamic characteristics of 1.55 mum wavelength distributed reflector (DR) lasers with wirelike active regions were examined for the first time. BER measurements over a wide temperature range were performed. 10 km error-free transmission at 10 Gbit/s was confirmed by using a dispersion-shifted fiber.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; error statistics; gallium arsenide; gallium compounds; indium compounds; GaInAsP-InP; bit error rate; dispersion-shifted fiber; distributed reflector laser; dynamic characteristics; wavelength 1.55 mum; wirelike active regions; Distributed Bragg reflectors; Distributed feedback devices; Fiber lasers; Gain measurement; Indium phosphide; Laser feedback; Semiconductor lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers; Distributed reflector (DR) laser; dynamic characteristics; high speed modulation; semiconductor lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702952
