Characterization and application of 600 V normally-off GaN transistors in hard switching DC/DC converters

Author

Heckel, Thomas ; Frey, Lothar ; Zeltner, Stefan

Author_Institution

Dept. of Electron Devices, Friedrich-Alexander-Univ. Erlangen-Nuremberg, Erlangen, Germany

fYear

2014

fDate

15-19 June 2014

Firstpage

63

Lastpage

66

Abstract

As GaN power devices emerge from research to industry, the characterization of these novel devices itself and its application in power electronic converters is essential. The purpose of this paper is to prove the capabilities of GaN technology using a novel 600 V normally-off GaN-on-Si transistor which shows no dynamic behavior of its on-resistance. A hard switching DC/DC converter prototype reveals efficiencies up to 99.3 % and switching frequencies up to 1 MHz incorporating a high power density up to 28 kW/l.

Keywords

DC-DC power convertors; III-V semiconductors; elemental semiconductors; gallium compounds; power transistors; silicon; switching convertors; wide band gap semiconductors; GaN; hard switching DC-DC converters; power electronic converters; power transistors; voltage 600 V; Current measurement; Electrical resistance measurement; Gallium nitride; Logic gates; Temperature measurement; Transistors; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on

Conference_Location

Waikoloa, HI

ISSN

1943-653X

Print_ISBN

978-1-4799-2917-7

Type

conf

DOI

10.1109/ISPSD.2014.6855976

Filename

6855976