Title :
Electron effective mass determined from experimental electron eigen-energies in InGaAs/InAlas multi-quantum wells
Author :
Tanaka, K. ; Kotera, N.
Author_Institution :
Dept. of Frontier Sci., Hiroshima City Univ., Hiroshima
Abstract :
In a In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells structure, interband transitions were clearly observed in a photocurrent difference spectrum. Using an assumption that the energy dependence of electron effective mass varied smoothly toward higher energy, its nonparabolicity was explicitly determined from 0.041 m0 to 0.07 m0 in conduction quantum well.
Keywords :
III-V semiconductors; aluminium compounds; conduction bands; effective mass; eigenvalues and eigenfunctions; gallium arsenide; indium compounds; photoconductivity; photoelectron spectra; photoemission; semiconductor quantum wells; In0.53Ga0.47As-In0.52Al0.48As; conduction band; conduction quantum well; electron effective mass; electron eigenenergies; interband transition; nonparabolicity; photocurrent difference spectrum; photocurrent spectra; semiconductor multiquantum well; Effective mass; Electrons; Equations; III-V semiconductor materials; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Photoconductivity; Quantum well devices; Electron effective mass; MQWs; eigen-energy; nonparabolicity;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702953
