Title :
Impact of low pressure long throw sputtering method on submicron copper metallization
Author :
Saito, T. ; Ohashi, N. ; Yasuda, J. ; Noguchi, J. ; Imai, T. ; Sasajima, K. ; Hiruma, K. ; Yamaguchi, H. ; Owada, N.
Author_Institution :
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
Abstract :
Cu metallization technology using sputtered Cu wiring and W-plug is developed. Submicron trenches for wiring with up to 0.4 μm width are filled with Cu by a low-pressure long-throw sputtering method followed by a reflow process. Blanket-W CVD with a sputtered W barrier is used for via filling. Using these technologies, multilevel Cu interconnect test structures are fabricated successfully
Keywords :
chemical vapour deposition; copper; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; isolation technology; sputter deposition; 0.4 micron; Cu metallization technology; Cu-W; W-plug; blanket-W CVD; copper metallization; long-throw sputtering method; low pressure long throw sputtering method; multilevel Cu interconnect test structures; reflow process; sputtered Cu wiring; sputtered W barrier; trench width; via filling; wiring trenches; Annealing; Atomic layer deposition; Copper; Filling; Heat treatment; Metallization; Sputtering; Testing; Tin; Wiring;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704779
