Monolithic, Sb-based electrically pumped VCSELs emitting at 2.3μm

Author

Ducanchez, A. ; Cerutti, L. ; Garnache, A. ; Genty, F.

Author_Institution

Inst. d´´Electron. du Sud (IES), Univ. Montpellier 2, Montpellier

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

3

Abstract

Demonstration of a 2.3 mum emission at room temperature under quasi continuous-wave operation from a Sb-based monolithic Vertical Cavity surface emitting laser is reported. The structure is composed of 2 n-doped AlAsSb/GaSb distributed Bragg reflectors, a type-I GaInAsSb/AlGaAsSb multi quantum well active region and a tunnel junction. For 80 mum diameter devices, density threshold of 0.8 kA/cm² at RT is achieved.

Keywords

III-V semiconductors; aluminium compounds; arsenic compounds; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; integrated optics; semiconductor quantum wells; surface emitting lasers; AlAsSb-GaSb-GaInAsSb-AlGaAsSb; VCSELs; density threshold; distributed Bragg reflectors; monolithic vertical cavity surface emitting laser; multi quantum well active region; quasi continuous-wave operation; room temperature; size 80 mum; temperature 293 K to 298 K; tunnel junction; wavelength 2.3 mum; Distributed Bragg reflectors; Gas lasers; Indium phosphide; Laser tuning; Semiconductor lasers; Substrates; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers; Wet etching; Mid-Infrared; VCSELs; antimonide semiconductors;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702955

Filename

4702955