DocumentCode
1812863
Title
Power density comparative analysis concerning to three transistor technologies applied to a CCM PFC BOOST converter using optimization techniques
Author
Sartori, Hamiltom C. ; Beltrame, Fernando ; Figueira, Henrique H. ; Baggio, Jose E. ; Pinheiro, J.R.
Author_Institution
Power Electron. & Control Group, Fed. Univ. of Santa Maria, Santa Maria, Brazil
fYear
2013
fDate
27-31 Oct. 2013
Firstpage
1317
Lastpage
1323
Abstract
A transistor technology comparative analysis applied to a CCM PFC BOOST converter, aiming to identify the technology that shows the highest volumetric power density for a particular application is discussed. For this analysis, a comparison among three different transistors technologies namely traditional MOSFET, CoolMOSC3 and CoolMOSCP is performed. The calculation of the transistors losses and its heat transfer system are discussed. An analysis of different operation points (Δi @ fs) is performed, pointing the optimum point for the maximum power density for each transistor technology. From these derivative points the comparisons are done. The power diode and the magnetic material utilized for the Boost inductor and EMI filter cores are the same for all three designs.
Keywords
MOSFET; electromagnetic interference; heat transfer; magnetic materials; optimisation; power convertors; power factor correction; power filters; CCM PFC boost converter; CoolMOSC3; CoolMOSCP; EMI filter; MOSFET; boost inductor; heat transfer system; magnetic material; optimization techniques; power density comparative analysis; power diode; three transistor technology; transistor loss; Capacitance; Density measurement; Heat sinks; MOSFET; Power system measurements; Switching loss; Boost converter; heat sink design; power density; switch losses; transistor technologies;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Conference (COBEP), 2013 Brazilian
Conference_Location
Gramado
ISSN
2175-8603
Type
conf
DOI
10.1109/COBEP.2013.6785286
Filename
6785286
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