Title :
The 150 mm RC-IGCT: A device for the highest power requirements
Author :
Wikstrom, Tobias ; Arnold, Martin ; Stiasny, Thomas ; Waltisberg, Christoph ; Ravener, Hendrik ; Rahimo, Munaf
Author_Institution :
Semicond., ABB Switzerland Ltd., Lenzburg, Switzerland
Abstract :
A 4500V RC-IGCT switching more than 10 kA in both switch and diode mode was developed for application in cascaded multilevel topologies. The performance was facilitated by using most of a 150 mm silicon wafer for a single device. Furthermore, the stray inductance of the gate bushing inductance was lowered an order of magnitude, and the use of an outer ring gate contributed significantly to lower impedance on the device itself. Adjustment of the di/dt choke led to significant reduction of total losses. FCE as a means of loss optimization was investigated.
Keywords :
elemental semiconductors; silicon; thyristors; FCE; RC-IGCT; cascaded multilevel topology; diode mode; gate bushing inductance; loss optimization; outer ring gate; reverse-conducting integrated gate commutated thyristor; silicon wafer; size 150 mm; stray inductance; switch mode; total losses reduction; voltage 4500 V; Anodes; Inductance; Inductors; Logic gates; Semiconductor diodes; Silicon; Switches;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4799-2917-7
DOI :
10.1109/ISPSD.2014.6855983
