Title :
Effects of PECVD deposition fluxes on the spatial variation of thin film density of as-deposited SiO2 films in interconnect structures
Author :
Lee, Kyung ; Deal, Michael ; McVittie, James ; Plummer, James ; Saraswat, Krishna
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
Atomic force microscopy (AFM) measurements in conjunction with isotropic wet etching was utilized to extract the 2D etch rate variation of PECVD-deposited SiO2 within aggressive structures. The etch rate, with resolution of 2.5 nm/min, was measured as a function of location within a cantilever test structure. The etch rate variation has been compared with calculated ion/neutral deposition flux distribution generated by an experimentally based deposition simulator. A model to predict film density as a function of ion flux which is based on collision induced thermal exchanges and collision induced surface diffusion is being considered
Keywords :
atomic force microscopy; density; dielectric thin films; etching; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; ion-surface impact; plasma CVD; semiconductor process modelling; silicon compounds; surface diffusion; 2D etch rate variation; PECVD flux effects; PECVD-deposited SiO2; SiO2; aggressive structures; as-deposited SiO2 films; atomic force microscopy; cantilever test structure; collision induced surface diffusion; collision induced thermal exchanges; deposition flux effects; deposition simulator; etch rate resolution; etch rate variation; film density prediction model; interconnect structures; ion flux; ion/neutral deposition flux distribution; isotropic wet etching; spatial thin film density variation; Amorphous materials; Atomic force microscopy; Atomic layer deposition; Atomic measurements; Chemicals; Force measurement; Plasma temperature; Sputtering; Testing; Wet etching;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704783
