Title :
Modeling of metal-over-silicon microstrip interconnections: the effect of SiO2 thickness on slow-wave losses
Author :
Wang, L. ; Le Coz, Y.L. ; Iverson, R.B. ; McDonald, J.F.
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
A theoretical model for a metal-over-silicon microstrip interconnection is presented using a quasi-TEM approximation. We consider in this paper several physical effects, including: SiO2 insulator layer, slow-wave substrate coupling, conductor resistance, skin-effect degradation, distributed RC propagation, and signal dispersion. We have examined, in particular, the influence of an underlying SiO2 insulator layer, as previous studies have not included such a layer. Pulse propagation has been studied for durations down to 50 ps, suitable for 10 GHz clocks. We have found that pulse attenuation is reduced dramatically as the thickness of the SiO2 layer is increased
Keywords :
MOS integrated circuits; dielectric thin films; dispersion (wave); integrated circuit interconnections; integrated circuit metallisation; integrated circuit modelling; losses; microstrip lines; silicon compounds; skin effect; 10 GHz; 50 ps; Si; SiO2 insulator layer; SiO2 layer; SiO2 thickness effects; SiO2-Si; clocks; conductor resistance; distributed RC propagation; metal-over-silicon microstrip interconnection model; metal-over-silicon microstrip interconnections; modeling; pulse attenuation; pulse propagation; quasi-TEM approximation; signal dispersion; skin-effect degradation; slow-wave losses; slow-wave substrate coupling; underlying SiO2 insulator layer; Capacitance; Conductivity; Conductors; Dielectrics; Equivalent circuits; Frequency; Insulation; Integrated circuit interconnections; Metal-insulator structures; Microstrip;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704784
