Strain issues on III–V compound semiconductors - imaging of strain distribution and crystal growth

Author

Fukuzawa, M. ; Yamada, M.

Author_Institution

Graduation Sch. of Sci. & Technol., Kyoto Inst. of Technol., Kyoto

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

6

Abstract

Strain issues on various commercial-substrates of InP, GaAs and GaP have been investigated by evaluating residual strain distribution with a scanning infrared polariscope (SIRP) and a near-infrared imaging polariscope (NIRIP). Since the thermal history during crystal growth and device-fabrication processes is sensitively reflected in the residual strain distribution, it is useful not only to control the residual strain in the substrates but also to avoid substrate breakage and slip generation.

Keywords

III-V semiconductors; crystal growth; gallium arsenide; gallium compounds; indium compounds; infrared imaging; internal stresses; polarimetry; semiconductor growth; GaAs; GaP; III-V compound semiconductor; InP; crystal growth; near-infrared imaging polariscope; residual strain distribution; scanning infrared polariscope; strain distribution; Capacitive sensors; Crystals; Gallium arsenide; History; III-V semiconductor materials; Indium phosphide; Polarization; Strain control; Strain measurement; Substrates; photoelastisity; polariscope; residual strain; slip generation; wafer breakage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702958

Filename

4702958