Title :
Strain issues on III–V compound semiconductors - imaging of strain distribution and crystal growth
Author :
Fukuzawa, M. ; Yamada, M.
Author_Institution :
Graduation Sch. of Sci. & Technol., Kyoto Inst. of Technol., Kyoto
Abstract :
Strain issues on various commercial-substrates of InP, GaAs and GaP have been investigated by evaluating residual strain distribution with a scanning infrared polariscope (SIRP) and a near-infrared imaging polariscope (NIRIP). Since the thermal history during crystal growth and device-fabrication processes is sensitively reflected in the residual strain distribution, it is useful not only to control the residual strain in the substrates but also to avoid substrate breakage and slip generation.
Keywords :
III-V semiconductors; crystal growth; gallium arsenide; gallium compounds; indium compounds; infrared imaging; internal stresses; polarimetry; semiconductor growth; GaAs; GaP; III-V compound semiconductor; InP; crystal growth; near-infrared imaging polariscope; residual strain distribution; scanning infrared polariscope; strain distribution; Capacitive sensors; Crystals; Gallium arsenide; History; III-V semiconductor materials; Indium phosphide; Polarization; Strain control; Strain measurement; Substrates; photoelastisity; polariscope; residual strain; slip generation; wafer breakage;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702958
