DocumentCode :
181300
Title :
Field-stop layer optimization for 1200V FS IGBT operating at 200˚C
Author :
Hsieh, Alice Pei-Shan ; Camuso, G. ; Udrea, F. ; Yi Tang ; Chiu Ng ; Ranjan, Niraj ; Charles, Adam
Author_Institution :
Dept. of Eng., Univ. of Cambridge, Cambridge, UK
fYear :
2014
fDate :
15-19 June 2014
Firstpage :
115
Lastpage :
118
Abstract :
This paper is concerned with design considerations for enabling the operation of Field-Stop Insulated Gate Bipolar Transistors (FS IGBTs) at 200 C. It is found that through a careful optimization of the Field-Stop layer doping profile the device has a low leakage current and delivers a favorable tradeoff between the on-state voltage (Von) and turn-off loss (Eoff). An investigation of the adverse effects of increasing the junction temperature on the temperature-dependent properties of the FS IGBTs is also discussed herein.
Keywords :
doping profiles; insulated gate bipolar transistors; leakage currents; semiconductor device models; FS IGBT; field stop insulated gate bipolar transistors; field stop layer doping profile; field stop layer optimization; junction temperature; low leakage current; temperature 200 degC; voltage 1200 V; Insulated gate bipolar transistors; Ionization; Leakage currents; Plasma temperature; Silicon; Temperature; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
ISSN :
1943-653X
Print_ISBN :
978-1-4799-2917-7
Type :
conf
DOI :
10.1109/ISPSD.2014.6855989
Filename :
6855989
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=181300
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