Field-stop layer optimization for 1200V FS IGBT operating at 200˚C

Author

Hsieh, Alice Pei-Shan ; Camuso, G. ; Udrea, F. ; Yi Tang ; Chiu Ng ; Ranjan, Niraj ; Charles, Adam

Author_Institution

Dept. of Eng., Univ. of Cambridge, Cambridge, UK

fYear

2014

fDate

15-19 June 2014

Firstpage

115

Lastpage

118

Abstract

This paper is concerned with design considerations for enabling the operation of Field-Stop Insulated Gate Bipolar Transistors (FS IGBTs) at 200 C. It is found that through a careful optimization of the Field-Stop layer doping profile the device has a low leakage current and delivers a favorable tradeoff between the on-state voltage (V_on) and turn-off loss (E_off). An investigation of the adverse effects of increasing the junction temperature on the temperature-dependent properties of the FS IGBTs is also discussed herein.

Keywords

doping profiles; insulated gate bipolar transistors; leakage currents; semiconductor device models; FS IGBT; field stop insulated gate bipolar transistors; field stop layer doping profile; field stop layer optimization; junction temperature; low leakage current; temperature 200 degC; voltage 1200 V; Insulated gate bipolar transistors; Ionization; Leakage currents; Plasma temperature; Silicon; Temperature; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on

Conference_Location

Waikoloa, HI

ISSN

1943-653X

Print_ISBN

978-1-4799-2917-7

Type

conf

DOI

10.1109/ISPSD.2014.6855989

Filename

6855989