High performance InP/InGaAs strained quantum well interband photodiodes for nir resonant photodetection

Author

Garrigues, M. ; Gil-Sobraques, R. ; Leclercq, J.-L. ; Parillaud, O. ; Decobert, J. ; Achouche, M.

Author_Institution

CNRS, Lyon Univ., Lyon

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

We report experimental characterization results for Near Infrared planar photodiodes with a potential cut-off wavelength higher than 1900 nm. The active layer is made up of three compressively strained InGaAs quantum wells. This photodiode is to be finally integrated in a MOEMS tunable resonant cavity for the realization of a low cost microspectrometer intended to agro-food applications.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; micro-optics; photodiodes; semiconductor quantum wells; InP-InGaAs; MOEMS tunable resonant cavity; NIR resonant photodetection; active layer; agro-food applications; compressively strained quantum wells; near infrared planar photodiodes; photodetector; strained quantum well interband photodiodes; Absorption; Costs; Distributed Bragg reflectors; Epitaxial growth; Fabry-Perot; Indium gallium arsenide; Indium phosphide; Photodetectors; Photodiodes; Resonance; InGaAs; RCE; near infrared resonant cavity; photodetector; quantum well; tunable;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702959

Filename

4702959