Title :
Simulation studies for short-circuit current crowding of MOSFET-Mode IGBT
Author :
Tanaka, Mitsuru ; Nakagawa, A.
Author_Institution :
Nihon Synopsys G.K., Tokyo, Japan
Abstract :
It was experimentally found that the short-circuit withstanding capability is degraded for MOSFET-mode IGBTs, whose anode efficiency is low and the ratio of electron current over hole current is greater than the mobility ratio. New destruction mechanism of MOSFET-Mode IGBT is proposed in this paper by using large scale TCAD simulations. It is found, for the first time, that current filaments are observed during the short-circuit operation in spite of homogeneous electron channel current flow and completely symmetric cell structure. The calculated results agree well with previously reported experimental results.
Keywords :
MOSFET; insulated gate bipolar transistors; short-circuit currents; technology CAD (electronics); MOSFET-mode IGBT destruction mechanism; anode efficiency; electron current ratio; hole current; homogeneous electron channel current flow; large scale TCAD simulations; mobility ratio; short-circuit current crowding simulation; symmetric cell structure; Anodes; Current density; Electric fields; Insulated gate bipolar transistors; Junctions; Lattices; Three-dimensional displays;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4799-2917-7
DOI :
10.1109/ISPSD.2014.6855990
