Simulation studies for short-circuit current crowding of MOSFET-Mode IGBT

It was experimentally found that the short-circuit withstanding capability is degraded for MOSFET-mode IGBTs, whose anode efficiency is low and the ratio of electron current over hole current is greater than the mobility ratio. New destruction mechanism of MOSFET-Mode IGBT is proposed in this paper by using large scale TCAD simulations. It is found, for the first time, that current filaments are observed during the short-circuit operation in spite of homogeneous electron channel current flow and completely symmetric cell structure. The calculated results agree well with previously reported experimental results.