The effects of stress on the formation of titanium silicide

Author

Cheng, S.L. ; Huang, H.Y. ; Peng, Y.C. ; Chen, L.J. ; Tsui, B.Y. ; Tsai, C.J. ; Guo, S.S. ; Yu, K.H.

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

1998

fDate

1-3 Jun 1998

Firstpage

190

Lastpage

192

Abstract

The effects of stress on the formation of titanium silicide have been investigated. Compressive stress presented in the silicon substrate was found to retard TiSi₂ formation significantly. On the other hand, tensile stress presented in the silicon substrate was found to promote the formation of TiSi₂. In addition, the TiSi₂ film thickness was found to decrease and increase with the compressive and tensile stress levels, respectively. The results indicated that compressive stress hinders Si migration through the Ti-Si interface so that the formation of TiSi₂ films is retarded. In contrast, tensile stress promotes Si diffusion to facilitate TiSi₂ formation

Keywords

chemical interdiffusion; compressive testing; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; integrated circuit yield; interface phenomena; internal stresses; tensile testing; titanium compounds; Si; Si migration; Ti-Si; Ti-Si interface; TiSi₂ film thickness; TiSi₂ formation; TiSi₂ formation promotion; TiSi₂ formation retardation; TiSi₂-Si; compressive stress; self-aligned silicide process; silicon substrate; stress effects; tensile stress; titanium silicide; titanium silicide formation; Compressive stress; Optical films; Semiconductor films; Silicidation; Silicides; Silicon; Substrates; Tensile stress; Thermal stresses; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-4285-2

Type

conf

DOI

10.1109/IITC.1998.704788

Filename

704788