RIE-plasma induced optical property degradation in GaInAsP/InP quantum-well structures

Author

Kurokawa, Munetaka ; Plumwongrot, Dhanorm ; Ozawa, Koji ; Maruyama, Takeo ; Nishiyama, Nobuhiko ; Arai, Shigehisa

Author_Institution

Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol., Tokyo

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

The origin and model of the time dependence of RIE-plasma induced optical property degradation of GaInAsP/InP quantum-well structures were investigated. Non-radiative recombination was enhanced by irradiating CH₄/H₂-plasma, and was found to be recovered during high temperature annealing in the embedding growth by organometallic vapor-phase-epitaxy.

Keywords

III-V semiconductors; MOCVD; annealing; gallium arsenide; gallium compounds; indium compounds; optical fabrication; photoluminescence; plasma materials processing; quantum well lasers; sputter etching; vapour phase epitaxial growth; GaInAsP-InP; RIE-plasma induced optical property degradation; annealing; long-wavelength lasers; nonradiative recombination; organometallic vapor-phase-epitaxial growth; photoluminescence; quantum-well structures; reactive ion etching; Annealing; Degradation; Distributed feedback devices; Indium phosphide; Optical buffering; Optical feedback; Plasma applications; Plasma temperature; Quantum wells; Radiative recombination; CH4/H2 plasma damage; GaInAsP/InP; PL; RIE; annealing; non-radiative recombination;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702963

Filename

4702963