A novel trench Schottky rectifier structure with controlled conductivity modulation

A Trench MOS Barrier Schottky rectifier (TMBS) structure with a novel conductivity modulation scheme has been presented. The conductivity modulation in the structure is achieved by using remote conductivity modulation (RCM) centers in the mesa regions, with varying frequency and doping profiles to achieve the desired trade-off between forward voltage drop and switching speed of the device. Using the new modulation scheme, devices with low forward voltage drop or low switching speeds can be obtained without the need for any lifetime control in the drift region. The RCM scheme has been implemented in a 200 V, 30 A trench Schottky device, and it has been demonstrated experimentally that by employing the RCM scheme, best-in-class forward voltage drop, breakdown voltage and switching speed are achieved.