Laser programmable metallic vias

Author

Bernstein, Joseph B. ; Zhang, Wei ; Nicholas, Carl H.

Author_Institution

Dept. of Mater. & Nucl. Eng., Maryland Univ., College Park, MD, USA

fYear

1998

fDate

1-3 Jun 1998

Firstpage

205

Lastpage

207

Abstract

Solid metallic connections have been successfully formed between two standard levels of metallization using a focused IR laser system. This process of laser via formation has successfully made connections with resistances of <0.8 Ω. Commercial laser repair systems used extensively by the memory industry were employed to perform over 100,000 individual links over a wide set of laser parameters without failure. This technology provides the yield and reliability necessary for fabrication of rapid turnaround MCM-D, wafer scale integration (WSI), and system-on-a-chip applications. Furthermore, because it is an additive process and the passivation remains completely intact, it lends itself to redundancy for programming high current power and ground lines

Keywords

integrated circuit interconnections; integrated circuit metallisation; integrated circuit packaging; integrated circuit reliability; integrated circuit yield; laser materials processing; maintenance engineering; microprocessor chips; multichip modules; optical focusing; passivation; redundancy; wafer-scale integration; 0.8 ohm; focused IR laser system; high current ground line programming; high current power line programming; interconnect reliability; interconnect yield; laser parameters; laser programmable metallic vias; laser repair systems; laser via formation; memory industry; passivation; rapid turnaround MCM-D; redundancy; resistance; solid metallic connections; standard metallization levels; system-on-a-chip; wafer scale integration; Additives; Circuits; Dielectrics; Inorganic materials; Optical materials; Optical pulses; System-on-a-chip; Thermal conductivity; Thermal expansion; Wafer scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-4285-2

Type

conf

DOI

10.1109/IITC.1998.704793

Filename

704793