Modified long channel model for analytical study of DSM circuits

Author

Ding, Li ; Mazumder, Pinaki

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

5

fYear

2002

fDate

2002

Abstract

In this paper, we propose a simple modified long channel model for analytical study of deep submicron circuits. The effects of velocity saturation of carrier drift and channel length modulation are modeled explicitly. The proposed model has a form very similar to the long channel model and experiments show that this simple model matches BSIM3 result quite well for very deep submicron MOSFETs. The proposed model is illustrated through the analysis of an inverter for calculations of the logic threshold voltage and the propagation delay.

Keywords

CMOS logic circuits; MOSFET; carrier mobility; circuit analysis computing; delays; integrated circuit modelling; logic gates; logic simulation; semiconductor device models; BSIM3 model; DSM circuits; MOSFET model; carrier drift velocity saturation; channel length modulation; deep submicron circuits; inverter analysis; logic threshold voltage; modified long channel model; propagation delay; Analytical models; Circuit synthesis; Computer simulation; Degradation; Equations; Logic devices; MOSFETs; Propagation delay; Robustness; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on

Print_ISBN

0-7803-7448-7

Type

conf

DOI

10.1109/ISCAS.2002.1010760

Filename

1010760