Title :
Modified long channel model for analytical study of DSM circuits
Author :
Ding, Li ; Mazumder, Pinaki
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
In this paper, we propose a simple modified long channel model for analytical study of deep submicron circuits. The effects of velocity saturation of carrier drift and channel length modulation are modeled explicitly. The proposed model has a form very similar to the long channel model and experiments show that this simple model matches BSIM3 result quite well for very deep submicron MOSFETs. The proposed model is illustrated through the analysis of an inverter for calculations of the logic threshold voltage and the propagation delay.
Keywords :
CMOS logic circuits; MOSFET; carrier mobility; circuit analysis computing; delays; integrated circuit modelling; logic gates; logic simulation; semiconductor device models; BSIM3 model; DSM circuits; MOSFET model; carrier drift velocity saturation; channel length modulation; deep submicron circuits; inverter analysis; logic threshold voltage; modified long channel model; propagation delay; Analytical models; Circuit synthesis; Computer simulation; Degradation; Equations; Logic devices; MOSFETs; Propagation delay; Robustness; Threshold voltage;
Conference_Titel :
Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on
Print_ISBN :
0-7803-7448-7
DOI :
10.1109/ISCAS.2002.1010760
