240 nm wide wavelength range of AlGaInAs MQWs selectively grown by MOVPE

Author

Décobert, J. ; Dupuis, N. ; Lagrée, P.Y. ; Lagay, N.

Author_Institution

III-V Lab., Alcatel-Thales, Marcoussis

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

We studied the Selective Area Growth of AlGaInAs Multiple Quantum Wells for wide wavelength range applications such as Coarse Wavelength Division Multiplexing. A 3-D vapor phase diffusion model is used to simulate the complete set of mask patterns. Due to high mask density, the long-range effect of Ga and Al compared to In species is a limiting parameter for the total achievable wavelength extension. Based on these simulations, we predicted and experimentally obtained a total PL wavelength shift of 240 nm.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; gallium compounds; photoluminescence; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; 3-D vapor phase diffusion model; AlGaInAs; MOVPE; coarse wavelength division multiplexing; limiting parameter; long-range effect; mask density; multiple quantum wells; photoluminescence; selective area growth; Epitaxial growth; Epitaxial layers; Integrated optics; Optical devices; Optical waveguides; Photonic band gap; Quantum well devices; Semiconductor process modeling; Stimulated emission; Wavelength division multiplexing; AlGaInAs; CWDM; InP; MOVPE; MQW; SAG;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702967

Filename

4702967