High channel mobility double gate trench MOSFET

This paper presents a high channel mobility trench MOSFET. At first, it is shown that the degradation of the channel mobility is caused by high impurity concentration p-base layer for SJ/FP MOSFET. In order to resolve this issue, we propose a MOSFET characterized by thin and low impurity concentration channel layer. The thin channel layer is sandwiched by "double" gate and is depleted because of the difference of the work function between gate electrode and channel layer, resulting in normally-off operation without p-base. Significant improvement of channel mobility and trade-off between on-resistance and gate charge is predicted by numerical simulation.