Title :
Understanding the correlation of HCI and NBTI degradation in pLDMOSFETs from MR-DCIV technique
Author :
Yandong He ; Ganggang Zhang ; Xing Zhang
Author_Institution :
Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
Abstract :
Multi-region DCIV technique(MR-DCIV) has demonstrated the capability to obtain the whole interface state profile in STI-based pLDMOSFETs. Based on its independence of forward bias and temperature, the unified MR-DCIV current modeling was established and verified. HCI and BTI related degradation in pLDMOSFETs has been experimentally studied, including Igmax/Ibmax, Vgmax and NBTI stresses. Our results reveal that Vgmax stress results in larger threshold voltage shift due to the higher interface state generation at channel and accumulation regions, linking to NBTI effect. Vgmax stress condition became the worse case degradation condition for pLDMOSFETs.
Keywords :
MOSFET; hot carriers; negative bias temperature instability; semiconductor device models; semiconductor device reliability; HCI degradation; MR-DCIV current modeling; NBTI degradation; hot carrier injection; multiregion DCIV; pLDMOSFET; threshold voltage shift; Degradation; Human computer interaction; Interface states; Logic gates; Stress; Substrates; Threshold voltage;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4799-2917-7
DOI :
10.1109/ISPSD.2014.6856003
