Very high-speed BJT buffer for track-and-hold amplifiers with enhanced linearity

Author

Aksin, Devrim Yilmaz ; Maloberti, Franco

Author_Institution

Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA

Volume

5

fYear

2002

fDate

2002

Abstract

This paper presents new design techniques to enhance low and high frequency track mode linearity of the switched emitter follower structure used in very high-speed track-and-hold amplifiers. Simulations using a 0.8 μm 5 V SiGe BICMOS process and symbolic harmonic distortion analysis verify the performance of the proposed techniques. Analysis results show a third harmonic better than -105 dB with 1.5 V_pp, at 100 MHz for a 1.6 pF hold capacitor.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; analogue processing circuits; circuit simulation; differential amplifiers; harmonic distortion; integrated circuit design; sample and hold circuits; semiconductor materials; very high speed integrated circuits; 0.8 micron; 1.6 pF; 100 MHz; 5 V; SiGe; SiGe BICMOS very high-speed track-and-hold amplifiers; analog input signal processing; design techniques; differential structures; enhanced linearity; high frequency track mode linearity; low frequency track mode linearity; simulations; switched emitter follower structure; symbolic harmonic distortion analysis; third harmonic; very high-speed BJT buffer; Analytical models; BiCMOS integrated circuits; Capacitors; Frequency; Germanium silicon alloys; Harmonic analysis; Harmonic distortion; Linearity; Performance analysis; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on

Print_ISBN

0-7803-7448-7

Type

conf

DOI

10.1109/ISCAS.2002.1010767

Filename

1010767