Title :
A bipolar 2-GSample/s track-and-hold amplifier (THA) in 0.35 μm SiGe technology
Abstract :
This paper describes the design and experimental implementation of a bipolar track-and-hold amplifier (THA) for use in an analog-to-digital converter suitable for wideband communication systems. A fully differential open-loop configuration was chosen in order to meet the required specifications. The THA was realized in a 0.35 μm SiGe HBT process with an fT of 65 GHz. The die size is 1.2 mm × 1.2 mm, including pads. The THA features nine bit resolution up to input frequencies of 500 MHz at a sampling frequency of 2 GSample/s. From 500 MHz to 900 MHz, at the same sampling frequency, eight bit performance is observed. The power dissipation, including buffers, is 550 mW from a single 3.3 V power supply.
Keywords :
Ge-Si alloys; analogue-digital conversion; bipolar analogue integrated circuits; differential amplifiers; high-speed integrated circuits; sample and hold circuits; semiconductor materials; 0.35 μm SiGe technology; 0.35 micron; 1.2 mm; 3.3 V; 500 to 900 MHz; 550 mW; 65 GHz; SiGe; SiGe HBT process; SiGe bipolar 2-GSample/s track-and-hold amplifier; analog-to-digital converter; die size; eight bit performance; fully differential open-loop configuration; nine bit resolution; power dissipation; sampling frequency; single 3.3 V power supply; wideband communication systems; Capacitors; Circuits; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Sampling methods; Silicon germanium; Switches; Tail; Voltage;
Conference_Titel :
Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on
Print_ISBN :
0-7803-7448-7
DOI :
10.1109/ISCAS.2002.1010768
