DocumentCode
181347
Title
Development and characterization of a new low-loss monolithic AC switch based on super-gain BJT
Author
Batut, N. ; Schellmanns, A. ; Jacques, S. ; Ren, Zhang ; Phung, L.V. ; Ihuel, F.
Author_Institution
GREMAN, Univ. of Tours, Tours, France
fYear
2014
fDate
15-19 June 2014
Firstpage
197
Lastpage
200
Abstract
This article deals with the development of an innovative low-loss monolithic AC switch based on super-gain BJT manufactured on silicon substrate. The GREMAN laboratory has started this study for ten years. Two main categories of AC switch are described: hybrid AC switch (based on the discrete association of 2 super-gain BJTs) and monolithic AC switch. The key criteria to design and process the monolithic power device are particularly discussed taking into consideration its application areas and its manufacturability.
Keywords
bipolar transistor switches; GREMAN laboratory; hybrid AC switch; low-loss monolithic AC switch; monolithic AC switch; monolithic power device; silicon substrate; super-gain BJT; Doping; Implants; Junctions; Mathematical model; Substrates; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location
Waikoloa, HI
ISSN
1943-653X
Print_ISBN
978-1-4799-2917-7
Type
conf
DOI
10.1109/ISPSD.2014.6856010
Filename
6856010
Link To Document