• DocumentCode
    181347
  • Title

    Development and characterization of a new low-loss monolithic AC switch based on super-gain BJT

  • Author

    Batut, N. ; Schellmanns, A. ; Jacques, S. ; Ren, Zhang ; Phung, L.V. ; Ihuel, F.

  • Author_Institution
    GREMAN, Univ. of Tours, Tours, France
  • fYear
    2014
  • fDate
    15-19 June 2014
  • Firstpage
    197
  • Lastpage
    200
  • Abstract
    This article deals with the development of an innovative low-loss monolithic AC switch based on super-gain BJT manufactured on silicon substrate. The GREMAN laboratory has started this study for ten years. Two main categories of AC switch are described: hybrid AC switch (based on the discrete association of 2 super-gain BJTs) and monolithic AC switch. The key criteria to design and process the monolithic power device are particularly discussed taking into consideration its application areas and its manufacturability.
  • Keywords
    bipolar transistor switches; GREMAN laboratory; hybrid AC switch; low-loss monolithic AC switch; monolithic AC switch; monolithic power device; silicon substrate; super-gain BJT; Doping; Implants; Junctions; Mathematical model; Substrates; Switches; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
  • Conference_Location
    Waikoloa, HI
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4799-2917-7
  • Type

    conf

  • DOI
    10.1109/ISPSD.2014.6856010
  • Filename
    6856010