2-μm wavelength range InGa(Al)As/InP-AlGaAs/GaAs wafer fused VCSELs for spectroscopic applications

Author

Mereuta, Alexandru ; Iakovlev, Vladimir ; Caliman, Andrei ; Syrbu, Alexei ; Rudra, Alok ; Kapon, Eli

Author_Institution

Lab. of Phys. of Nanostruct., Ecole Polytech. Fed. de Lausanne, Lausanne

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

3

Abstract

We demonstrate 2-mum wavelength, wafer-fused InGa(Al)As/InP-AlGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) emitting single-mode power of 0.5 mW at room-temperature with a threshold current of 4 mA and side-mode suppression ratio of over 30 dB. Emission wavelength can be continuously tuned with current by ~5 nm without mode hopping with a tuning rate of 0.31 nm/mA. These features demonstrate the long wavelength VCSELs potential for gas sensing and other optical spectroscopy applications.

Keywords

aluminium compounds; gallium arsenide; indium compounds; laser tuning; surface emitting lasers; InGaAlAs-InP-AlGaAs-GaAs; VCSELs; current 4 mA; emission wavelength; mode hopping; power 0.5 mW; room-temperature; side-mode suppression ratio; temperature 293 K to 298 K; threshold current; tuning; vertical-cavity surface-emitting lasers; wavelength 2 mum; Gallium arsenide; Laser modes; Laser tuning; Optical surface waves; Power lasers; Spectroscopy; Surface emitting lasers; Surface waves; Threshold current; Vertical cavity surface emitting lasers; Vertical surface emitting lasers; gas sensing; tunable lasers; wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702974

Filename

4702974