Title :
An integrated tri-mode non-inverting buck-boost DC-DC converter with segmented power devices and power transmission gate structure
Author :
Jin, Guang ; Ng, W.T.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON, Canada
Abstract :
This paper presents a tri-mode non-inverting buck-boost DC-DC converter with segmented power devices, power transmission gate structure and dead-time control to improve the power conversion efficiency and the overall size. The proposed DC-DC converter accepts an input voltage, Vin from 2.7V to 5V and produces an output, Vout ranging from 1V to 6V. A peak power conversion efficiency of 94% is observed from the simulation result. It is designed to operate in buck, boost or buck-boost mode while maintaining peak efficiency. Unlike existing switch-mode power supplies, a power transmission gate is used as the high-side driver to eliminate external components such as the bootstrap circuit. This would save a significant amount of PCB space at the expense of only 18% silicon area overhead. The proposed IC is designed using Dongbu HiTek´s 0.18μm UVCMOS technology.
Keywords :
CMOS integrated circuits; DC-DC power convertors; switched mode power supplies; Dongbu HiTek UVCMOS technology; PCB space; dead-time control; efficiency 94 percent; high-side driver; integrated tri-mode non-inverting buck-boost dc-dc converter; power conversion efficiency; power transmission gate structure; segmented power devices; size 0.18 mum; switch-mode power supplies; voltage 1 V to 6 V; Integrated circuits; Logic gates; Power conversion; Power transmission; Switches; Switching loss; Transistors;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4799-2917-7
DOI :
10.1109/ISPSD.2014.6856011