Theoretical and experimental analysis of InAs/InP quantum dash lasers

Author

Heck, S.C. ; Healy, S.B. ; Osborne, S. ; Williams, D.P. ; Fehse, R. ; O´Reilly, E.P. ; Lelarge, F. ; Poingt, F. ; Accard, A. ; Pommereau, F. ; Legouezigou, O. ; Dagens, B.

Author_Institution

Tyndall Nat. Inst., Cork

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

We study 1.5 mum quantum ldquodash in a wellrdquo (DWELL) and quantum ldquodash in a barrierrdquo (DBAR) lasers. Calculations for the DWELL show a similar magnitude can be achieved for the conduction and valence band density of states over a sizeable energy range, the optimum case for a semiconductor laser. Experimental characterisation shows the room temperature threshold current remains dominated by non-radiative recombination, as previously observed for 1.55 mum quantum well lasers.

Keywords

III-V semiconductors; conduction bands; indium compounds; quantum dash lasers; quantum well lasers; valence bands; wide band gap semiconductors; DBAR; DWELL; conduction band density; nonradiative recombination; quantum dash barrier lasers; quantum dash well laser; semiconductor laser; threshold current; valence band density; wavelength 1.5 mum; Indium phosphide; Laser stability; Laser theory; Quantum dot lasers; Quantum dots; Quantum well lasers; Radiative recombination; Semiconductor lasers; Temperature; Threshold current; long wavelength lasers; quantum-well-wire and dot devices; semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702976

Filename

4702976