• DocumentCode
    1813643
  • Title

    AlSb/InAs HEMTs on InP substrate using wet and dry etching for mesa isolation

  • Author

    Olivier, Aurélien ; Gehin, Thomas ; Desplanque, Ludovic ; Wallart, Xavier ; Roelens, Yannick ; Dambrine, Gilles ; Cappy, Alain ; Bollaert, Sylvain ; Lefebvre, Eric ; Malmkvist, Mikael ; Grahn, Jan

  • Author_Institution
    Inst. of Electron. Microelectron. & Nanotechnol., Villeneuve d´´Ascq
  • fYear
    2008
  • fDate
    25-29 May 2008
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this paper, we present experimental results on AlSb/InAs HEMTs with deep and shallow mesa using wet and dry etching techniques respectively. Similar electrical results have been obtained using both techniques.
  • Keywords
    III-V semiconductors; aluminium compounds; etching; high electron mobility transistors; indium compounds; AlSb-InAs; HEMTs; deep mesa; dry etching; mesa isolation; shallow mesa; wet etching; Doping; Dry etching; Fabrication; Gold; HEMTs; Indium phosphide; MODFETs; Resists; Substrates; Wet etching; AlSb/InAs; HEMT; ICP; dry etching; wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
  • Conference_Location
    Versailles
  • ISSN
    1092-8669
  • Print_ISBN
    978-1-4244-2258-6
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2008.4702979
  • Filename
    4702979
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1813643