One step Nano Selective Area Growth of localized InAs/InP quantum dots for single photon source applications

Author

Gogneau, N. ; Le Gratiet, L. ; Cambril, E. ; Beaudoin, G. ; Patriarche, G. ; Beveratos, A. ; Hostein, R. ; Robert-Philip, I. ; Sagnes, I.

Author_Institution

Lab. de Photonique et Nanostruct., CNRS, Marcoussis

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

We demonstrate a new approach based on Nano Selective Area Growth, to precisely localize InAs/InP quantum dots (QDs) grown by MetalOrganic Vapor Phase Epitaxy. This approach leads to the formation of site-controlled InAs/InP QDs with high structural properties, and allows a precise control of the growth rate and thus of the QD size. The InP capping layer presents an optimal surface morphology for the development of microcavities located around the QDs.

Keywords

III-V semiconductors; MOCVD; indium compounds; semiconductor growth; semiconductor quantum dots; surface morphology; vapour phase epitaxial growth; InAs-InP; capping layer; metalorganic vapor phase epitaxy; nano selective area growth; quantum dots; structural properties; surface morphology; Atomic force microscopy; Dielectric substrates; Epitaxial growth; Hydrogen; Indium phosphide; Microcavities; Nanostructures; Quantum dots; Scanning electron microscopy; Transmission electron microscopy; Metalorganic vapor phase epitaxy; Selective area growth; Single photon source; quantum dots;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702981

Filename

4702981