Title :
ON-state breakdown mechanism of GaN power HEMTs
Author :
Jinhan Zhang ; Sen Huang ; Qi Zhou ; Xinhua Wang ; Ke Wei ; Guoguo Liu ; Yingkui Zheng ; Xiaojuan Chen ; Xinyu Liu ; Zhongjie Yu ; Wanjun Chen ; Bo Zhang
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
Temperature-dependent ON-state breakdown (BVON) loci of AlGaN/GaN high-electron-mobility transistors (HEMTs) were experimentally demonstrated for the first time. With gate-current extraction technique, impact ionization was revealed to be responsible for the ON-state breakdown in our device as the HEMTs is marginally turned on. The characteristic electric-field Ei of impact ionization was extracted exhibiting an U-shaped temperature dependence from 40 to -30 oC, with minimum Ei occurs at -10 oC. Such anomalous temperature dependence of Ei together with the kink effect observed in our devices stem from coulomb scattering effect of the acceptor-like traps in AlGaN/GaN heterostructures.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; ionisation; power HEMT; semiconductor device breakdown; wide band gap semiconductors; AlGaN-GaN; Coulomb scattering effect; U-shaped temperature dependence; acceptor-like traps; characteristic electric-field; gate-current extraction technique; high-electron-mobility transistors; impact ionization; kink effect; power HEMTs; temperature 40 degC to -30 degC; temperature-dependent ON-state breakdown mechanism; Aluminum gallium nitride; Electric breakdown; Gallium nitride; HEMTs; Logic gates; MODFETs; Temperature measurement; AlGaN/GaN HEMTs; ON-state breakdown; acceptor-like traps; coulomb scattering; impact ionization;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4799-2917-7
DOI :
10.1109/ISPSD.2014.6856020
