Title :
Design considerations for In0.52Al0.48As based avalanche photodiodes
Author :
Mun, S. C Liew Tat ; Tan, C.H. ; Marshall, A.R.J. ; Goh, Y.L. ; Tan, L.J.J. ; David, J.P.R.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Of Sheffield, Sheffield
Abstract :
We provide a set of design considerations for In0.52Al0.48As based avalanche photodiodes (APDs) in an attempt to reduce the excess noise factor. We compared the effects of tapered electric fields to constant electric fields, in APDs with avalanche regions of 0.2 mum and 2.0 mum, on multiplication and excess noise factors using a Simple Monte Carlo model. We found that diodes having p+-n-n+ doping profiles produce the lowest and highest excess noise in diodes with avalanche regions of 0.2 mum and 2.0 mum respectively. However due to the higher peak electric fields in thin diodes with field gradients causing tunneling current to become significant, the ideal p+-i-n+ diodes still provide the overall preferred structure. We also observed that different electric field gradients in the p+ cladding regions have negligible effect on the excess noise factors.
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; avalanche photodiodes; indium compounds; semiconductor device models; semiconductor device noise; tunnelling; In0.52Al0.48As; avalanche photodiodes; excess noise factors; multiplication; p+-n-n+ doping profiles; simple Monte Carlo model; tapered electric fields; tunneling current; Avalanche photodiodes; Charge carrier processes; Ionization; Monte Carlo methods; Noise figure; Noise reduction; Semiconductor device noise; Semiconductor diodes; Signal to noise ratio; Sliding mode control; In0.52Al0.48As; Monte Carlo modeling; avalanche photodiodes; excess noise factor; impact ionization;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702983
