Static and switching characteristics of 1200 V SiC Junction Transistors with on-chip integrated Schottky rectifiers

A comprehensive evaluation of high-temperature (up to 200°C) on-state, blocking voltage and switching operation of 1200 V-class SiC Junction Transistors (SJTs) with on-chip integrated Schottky rectifiers is presented in this paper. The SJTs feature current gains of 69 and on-resistance of 6.3 mΩ-cm² at room-temperature. The integrated free-wheeling Schottky rectifier displays a 0.9 V knee voltage and low on-resistance of 3.3 mΩ-cm² at 25°C. Both the SJT and integrated Schottky rectifier show purely majority carrier characteristics with a desirable positive temperature co-efficient of on-state voltage drop. The integrated devices display robust 1200 V blocking voltages with low-leakage currents and a positive temperature co-efficient of breakdown - a clear signature of avalanche multiplication. Sub-50 ns switching waveforms are observed during hard-switching with an inductive load, due to the lower parasitic inherent to the integrated devices. Promising long-term current gain stability is obtained for the latest generation of SiC SJTs.