TCAD methodology for simulation of GaN-HEMT power devices

Gallium nitride (GaN) based High Electron Mobility Transistors (HEMTs) are candidates for the next generation of power electronic devices and are therefore subject of intense research activities worldwide. Technology CAD (TCAD) has proven a major impact on the optimization of silicon based device technologies. It is a logical follow up to provide accurate simulation tools, methods and models for GaN-based device technologies that are benchmarked against hardware data. This work presents a systematic investigation of GaN-HEMTs by TCAD, including process emulation, in plane and full stress simulation, and drift-diffusion device simulation.