Influence of surface reconstructions on the shape of InAs quantum dots grown on InP(001)

Author

Dupuy, E. ; Xu, G. ; Regreny, P. ; Robach, Y. ; Gendry, M. ; Patriarche, G. ; Chauvin, N. ; Bru-Chevallier, C. ; Morris, D. ; Pauc, N. ; Aimez, V. ; Drouin, D.

Author_Institution

CNRS, Ecole Centrale de Lyon, Ecully

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

3

Abstract

Growth mechanisms controlling the shape of InAs quantum dots grown by solid source MBE on InP(001) are studied. InAs surface reconstructions play an important role to get more isotropic quantum dots rather than elongated quantum dashes. Dash to dot shape transition is also demonstrated with postgrowth treatments that change InAs surface reconstructions. Properties of such single InAs/InP quantum dots on low density samples are finally evaluated with microphotoluminescence and cathodoluminescence studies.

Keywords

III-V semiconductors; cathodoluminescence; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum dots; surface reconstruction; InAs-InP; InP; InP(001)-substrate; cathodoluminescence; isotropic quantum dots; microphotoluminescence; quantum dot growth; solid source MBE; surface reconstructions; Atomic force microscopy; Indium phosphide; Molecular beam epitaxial growth; Nanostructures; Quantum dots; Shape control; Solids; Surface reconstruction; Surface treatment; Temperature; InAs/InP quantum dots; Self-organized growth; shape transition; single quantum dot; solid source MBE; surface reconstructions;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702986

Filename

4702986