SPICE modeling and dynamic electrothermal simulation of SiC power MOSFETs

Author

d´Alessandro, Vincenzo ; Magnani, A. ; Riccio, M. ; Breglio, G. ; Irace, A. ; Rinaldi, Niccolo ; Castellazzi, Alberto

Author_Institution

Dept. Electr. Eng. & Inf. Technol., Univ. of Naples Federico II, Naples, Italy

fYear

2014

fDate

15-19 June 2014

Firstpage

285

Lastpage

288

Abstract

This paper presents a computationally efficient 3-D simulation approach for the dynamic electrothermal analysis of SiC power MOSFETs. The strategy relies on a circuit representation of the whole device, where the electrothermal feedback is enabled through an equivalent electrical network, and the elementary device cell is described by a novel behavioral model accounting for the non-intuitive temperature dependences of key physical parameters.

Keywords

SPICE; equivalent circuits; power MOSFET; semiconductor device models; silicon compounds; thermal analysis; wide band gap semiconductors; 3D simulation; SPICE modeling; SiC; behavioral model; circuit representation; dynamic electrothermal analysis; dynamic electrothermal simulation; electrothermal feedback; elementary device cell; equivalent electrical network; nonintuitive temperature dependency; power MOSFET; whole device; Integrated circuit modeling; MOSFET; SPICE; Semiconductor device modeling; Silicon carbide; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on

Conference_Location

Waikoloa, HI

ISSN

1943-653X

Print_ISBN

978-1-4799-2917-7

Type

conf

DOI

10.1109/ISPSD.2014.6856032

Filename

6856032