Improved trap-related characteristics on SiNx/AlGaN/GaN MISHEMTs with surface treatment

Author

Yu-Syuan Lin ; King-Yuen Wong ; Lansbergen, G.P. ; Yu, J.L. ; Yu, C.J. ; Hsiung, C.W. ; Chiu, H.C. ; Liu, S.D. ; Chen, P.C. ; Yao, F.W. ; Su, R.Y. ; Chou, C.Y. ; Tsai, C.Y. ; Yang, F.J. ; Tsai, C.L. ; Tsai, C.S. ; Chen, Xia ; Tuan, H.C. ; Kalnitsky, Alex

Author_Institution

RF & Specialty Technol. Div., Taiwan Semicond. Manuf. Co., Ltd., Hsinchu, Taiwan

fYear

2014

fDate

15-19 June 2014

Firstpage

293

Lastpage

296

Abstract

In this paper, the reliable SiN_x/AlGaN/GaN MISHEMTs on silicon substrate with improved trap-related characteristics have been well demonstrated. The devices with our proposed treatment method showed less deep-level traps and more Si surface donors at SiN_x-AlGaN interface. The trap related device characteristics are also improved by using our optimized treatment method. The devices with proposed treatment method exhibit less current collapse and better positive bias temperature stability of threshold voltage. All the results suggest that the proposed treatment method is very effective to improve the slow-trap related device reliability.

Keywords

III-V semiconductors; MISFET; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device reliability; silicon compounds; surface treatment; wide band gap semiconductors; MISHEMT; SiN_x-AlGaN-GaN; deep-level trap-related characteristics; positive bias temperature stability; silicon substrate; slow-trap related device reliability; surface donor; surface treatment; trap related device characteristics; Aluminum gallium nitride; Dielectrics; Gallium nitride; Logic gates; Silicon; Stress; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on

Conference_Location

Waikoloa, HI

ISSN

1943-653X

Print_ISBN

978-1-4799-2917-7

Type

conf

DOI

10.1109/ISPSD.2014.6856034

Filename

6856034