DocumentCode
1813977
Title
Temperature dependence of GaSb overgrowth of tungsten on GaSb (001) substrates using MOVPE
Author
Astromskas, Gvidas ; Jeppsson, Mattias ; Caroff, Philippe ; Wernersson, Lars-Erik
Author_Institution
Dept. of Solid State Phys., Lund Univ., Lund
fYear
2008
fDate
25-29 May 2008
Firstpage
1
Lastpage
4
Abstract
We demonstrate GaSb overgrowth over tungsten patterns and that selective area epitaxy is achievable in the W/GaSb system. By controlling the facet growth at low temperatures, it is possible to embed a metal grating in a thin layer.
Keywords
III-V semiconductors; MOCVD; gallium compounds; semiconductor epitaxial layers; semiconductor growth; tungsten; vapour phase epitaxial growth; GaSb; GaSb(001) substrate; MOVPE; W-GaSb; overgrowth mechanism; selective area epitaxy; tungsten pattern; Cleaning; Epitaxial growth; Epitaxial layers; Inductors; Plasma applications; Plasma temperature; Resists; Substrates; Temperature dependence; Tungsten; GaSb; SAE; lateral growth; overgrowth; tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location
Versailles
ISSN
1092-8669
Print_ISBN
978-1-4244-2258-6
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2008.4702990
Filename
4702990
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