• DocumentCode
    1814015
  • Title

    Fabry-Perot laser diodes and DFB laser diodes emitting at 2.6μM for absorption spectroscopy

  • Author

    Barat, D. ; Vicet, A. ; Angellier, J. ; Rouillard, Y. ; Le Gratiet, L. ; Guilet, S. ; Martinez, A. ; Ramdane, A.

  • Author_Institution
    CNRS, Univ. Montpellier 2, Montpellier
  • fYear
    2008
  • fDate
    25-29 May 2008
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We report on FP and DFB semiconductor lasers based on GaInAsSb/AlGaAsSb quantum wells, grown by molecular beam epitaxy. The devices were processed by wet etching or inductively coupled plasma process. Electron beam lithography was used to deposit a metal Bragg grating on each side of the laser ridge to fabricate DFB lasers. The devices all operate in the continuous wave regime at room temperature with a single frequency emission above 2.6 mum and good tuning properties, making them well adapted to tunable diode laser absorption spectroscopy.
  • Keywords
    Bragg gratings; III-V semiconductors; aluminium compounds; distributed feedback lasers; electron beam lithography; etching; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; plasma materials processing; quantum well lasers; semiconductor quantum wells; DFB semiconductor lasers; Fabry-Perot laser diodes; GaInAsSb-AlGaAsSb; electron beam lithography; inductively coupled plasma process; metal Bragg grating; molecular beam epitaxy; quantum wells; temperature 293 K to 298 K; tunable diode laser absorption spectroscopy; tuning property; wavelength 2.6 mum; wet etching; Absorption; Diode lasers; Fabry-Perot; Laser tuning; Molecular beam epitaxial growth; Plasma temperature; Quantum well lasers; Semiconductor lasers; Spectroscopy; Wet etching; DFB Lasers; gas sensing; metal grating; mid-infrared region;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
  • Conference_Location
    Versailles
  • ISSN
    1092-8669
  • Print_ISBN
    978-1-4244-2258-6
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2008.4702992
  • Filename
    4702992