Title :
Fabry-Perot laser diodes and DFB laser diodes emitting at 2.6μM for absorption spectroscopy
Author :
Barat, D. ; Vicet, A. ; Angellier, J. ; Rouillard, Y. ; Le Gratiet, L. ; Guilet, S. ; Martinez, A. ; Ramdane, A.
Author_Institution :
CNRS, Univ. Montpellier 2, Montpellier
Abstract :
We report on FP and DFB semiconductor lasers based on GaInAsSb/AlGaAsSb quantum wells, grown by molecular beam epitaxy. The devices were processed by wet etching or inductively coupled plasma process. Electron beam lithography was used to deposit a metal Bragg grating on each side of the laser ridge to fabricate DFB lasers. The devices all operate in the continuous wave regime at room temperature with a single frequency emission above 2.6 mum and good tuning properties, making them well adapted to tunable diode laser absorption spectroscopy.
Keywords :
Bragg gratings; III-V semiconductors; aluminium compounds; distributed feedback lasers; electron beam lithography; etching; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; plasma materials processing; quantum well lasers; semiconductor quantum wells; DFB semiconductor lasers; Fabry-Perot laser diodes; GaInAsSb-AlGaAsSb; electron beam lithography; inductively coupled plasma process; metal Bragg grating; molecular beam epitaxy; quantum wells; temperature 293 K to 298 K; tunable diode laser absorption spectroscopy; tuning property; wavelength 2.6 mum; wet etching; Absorption; Diode lasers; Fabry-Perot; Laser tuning; Molecular beam epitaxial growth; Plasma temperature; Quantum well lasers; Semiconductor lasers; Spectroscopy; Wet etching; DFB Lasers; gas sensing; metal grating; mid-infrared region;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702992
