Title :
High temperature stability evaluation of SiC MOSFETs
Author :
Weicheng Zhou ; Xueqian Zhong ; Kuang Sheng
Author_Institution :
Coll. of Electr. Eng., Zhejiang Univ., Hangzhou, China
Abstract :
SiC MOSFETs are expected to have higher thermal runaway temperature, compared with other SiC power devices. In this paper, high temperature stability of SiC MOSFETs is investigated by experiments and simulations. At room temperature, the maximum steady-state junction temperature of the SiC MOSFET is measured to exceed 270°C and saber simulations based on experimental model reproduce the thermal process.
Keywords :
power MOSFET; power semiconductor devices; silicon compounds; wide band gap semiconductors; MOSFET; SiC; high temperature stability evaluation; power devices; temperature 270 C; temperature 293 K to 298 K; thermal runaway temperature; Heating; Junctions; MOSFET; Silicon carbide; Steady-state; Temperature measurement; Temperature sensors;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4799-2917-7
DOI :
10.1109/ISPSD.2014.6856037
