DocumentCode
181402
Title
High temperature stability evaluation of SiC MOSFETs
Author
Weicheng Zhou ; Xueqian Zhong ; Kuang Sheng
Author_Institution
Coll. of Electr. Eng., Zhejiang Univ., Hangzhou, China
fYear
2014
fDate
15-19 June 2014
Firstpage
305
Lastpage
308
Abstract
SiC MOSFETs are expected to have higher thermal runaway temperature, compared with other SiC power devices. In this paper, high temperature stability of SiC MOSFETs is investigated by experiments and simulations. At room temperature, the maximum steady-state junction temperature of the SiC MOSFET is measured to exceed 270°C and saber simulations based on experimental model reproduce the thermal process.
Keywords
power MOSFET; power semiconductor devices; silicon compounds; wide band gap semiconductors; MOSFET; SiC; high temperature stability evaluation; power devices; temperature 270 C; temperature 293 K to 298 K; thermal runaway temperature; Heating; Junctions; MOSFET; Silicon carbide; Steady-state; Temperature measurement; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location
Waikoloa, HI
ISSN
1943-653X
Print_ISBN
978-1-4799-2917-7
Type
conf
DOI
10.1109/ISPSD.2014.6856037
Filename
6856037
Link To Document