Title :
Fast recovery performance of vertical GaN Schottky barrier diodes on low-dislocation-density GaN substrates
Author :
Ueno, Masahiro ; Yoshimoto, Shusuke ; Ishihara, Koichi ; Okada, Masayuki ; Sumiyoshi, Kazuhide ; Hirano, Harutoyo ; Mitsuhashi, Fuminori ; Yoshizumi, Yusuke ; Ishizuka, T. ; Kiyama, Makoto
Author_Institution :
Semicond. Technol. R&D Labs., Sumitomo Electr. Ind. Ltd., Osaka, Japan
Abstract :
Vertical GaN Schottky barrier diodes (SBDs) were fabricated on free-standing GaN substrates with low dislocation density. Vertical GaN-SBDs with a forward current of 5A and a blocking voltage of 600V exhibit the most superior reverse recovery characteristics among GaN, SiC, and Si diodes. We also confirmed stable forward and reverse aging characteristics for 1000 hours at 150 °C.
Keywords :
III-V semiconductors; Schottky diodes; dislocation density; gallium compounds; wide band gap semiconductors; GaN; SBDs; current 5 A; fast recovery performance; free-standing substrates; low dislocation density; low-dislocation-density substrates; reverse aging characteristics; reverse recovery characteristics; temperature 150 degC; time 1000 hour; vertical GaN Schottky barrier diodes; voltage 600 V; Gallium nitride; Schottky barriers; Schottky diodes; Silicon; Silicon carbide; Substrates;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4799-2917-7
DOI :
10.1109/ISPSD.2014.6856038
