• DocumentCode
    181408
  • Title

    Thermal stress and mechanical strain real time mapping in Intelligent Power Switches device

  • Author

    Panarello, S. ; Triolo, C. ; Testa, Alfredo ; Patane, S. ; Patti, D. ; Russo, S.

  • Author_Institution
    Univ. of Messina, Messina, Italy
  • fYear
    2014
  • fDate
    15-19 June 2014
  • Firstpage
    321
  • Lastpage
    324
  • Abstract
    Thermal stress and mechanical deformations are the principal causes of power devices premature failures, especially in those critical conditions where they work under repetitive high current pulses or during overloads. Currently, a large effort has been devoted, both in experimental and computer modeling techniques, to predict the lifetime of those power devices used in automotive applications where high reliability is mandatory. Moreover, the knowledge of the thermal and mechanical stress, during the operations, could allow an effective refining of the design rules to improve devices reliability. In this paper, a novel technique to experimentally measure both thermal and mechanical fatigue on IPSs (Intelligent Power Switches) is presented.
  • Keywords
    failure analysis; plastic deformation; power semiconductor switches; semiconductor device reliability; thermal stresses; IPSs; computer modeling techniques; device reliability; intelligent power switches device; mechanical fatigue; mechanical strain real time mapping; mechanical stress; plastic strain; power device premature failures; repetitive high current pulses; thermal stress; Laser beams; Measurement by laser beam; Reliability; Strain; Stress; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
  • Conference_Location
    Waikoloa, HI
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4799-2917-7
  • Type

    conf

  • DOI
    10.1109/ISPSD.2014.6856041
  • Filename
    6856041