DocumentCode
181408
Title
Thermal stress and mechanical strain real time mapping in Intelligent Power Switches device
Author
Panarello, S. ; Triolo, C. ; Testa, Alfredo ; Patane, S. ; Patti, D. ; Russo, S.
Author_Institution
Univ. of Messina, Messina, Italy
fYear
2014
fDate
15-19 June 2014
Firstpage
321
Lastpage
324
Abstract
Thermal stress and mechanical deformations are the principal causes of power devices premature failures, especially in those critical conditions where they work under repetitive high current pulses or during overloads. Currently, a large effort has been devoted, both in experimental and computer modeling techniques, to predict the lifetime of those power devices used in automotive applications where high reliability is mandatory. Moreover, the knowledge of the thermal and mechanical stress, during the operations, could allow an effective refining of the design rules to improve devices reliability. In this paper, a novel technique to experimentally measure both thermal and mechanical fatigue on IPSs (Intelligent Power Switches) is presented.
Keywords
failure analysis; plastic deformation; power semiconductor switches; semiconductor device reliability; thermal stresses; IPSs; computer modeling techniques; device reliability; intelligent power switches device; mechanical fatigue; mechanical strain real time mapping; mechanical stress; plastic strain; power device premature failures; repetitive high current pulses; thermal stress; Laser beams; Measurement by laser beam; Reliability; Strain; Stress; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location
Waikoloa, HI
ISSN
1943-653X
Print_ISBN
978-1-4799-2917-7
Type
conf
DOI
10.1109/ISPSD.2014.6856041
Filename
6856041
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