Comparative collector design in InGaAs and GaAsSb based InP DHBTs

Author

Nodjiadjim, V. ; Riet, M. ; Scavennec, A. ; Berdaguer, P. ; Gentner, J.L. ; Godin, J. ; Bove, P. ; Lijadi, M.

Author_Institution

III-V Lab., GIE Alcatel-Thales, Marcoussis

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

In this paper we compare the base-collector transit time of GaAsSb- and InGaAs-based double heterojunction bipolar transistors (DHBT) at low and high collector current. Using a ldquotype IIrdquo base-collector heterostructure leads to a simpler design to increase the operating current range of the devices.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor devices; GaAsSb; InGaAs; InP; base-collector transit time; collector current; double heterojunction bipolar transistors; type II base-collector heterostructure; Double heterojunction bipolar transistors; Heterojunction bipolar transistors; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Leakage current; Metallization; Planarization; Synthetic aperture sonar; Tunneling; GaAsSb base; InGaAs base; InP heterojunction bipolar transistor; base-collector transit time;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702996

Filename

4702996