Title :
Design and implementation of a prototype hybrid simulation environment
Author_Institution :
Texas Instruments, Inc., Dallas, TX, USA
Abstract :
A prototype coupling a process simulator, like SUPREM4, to external process and equipment models, such as Advanced Vacuum Processors (AVPs), has been investigated and implemented. A MOS transistor was simulated using the hybrid simulation prototype. A combination of process simulators and AVP equipment models were used in the simulations. The modified process flow utilizes process simulators like SUPREM4 and SAMPLE, together with AVP equipment models for plasma-assisted deposition and etch of polysilicon. It is concluded that the prototype demonstrates the feasibility of a mixed equipment model-process simulator environment
Keywords :
semiconductor process modelling; MOS transistor; SAMPLE; SUPREM4; Si; advanced vacuum processor equipment models; elemental semiconductor; etch; implementation; mixed equipment model-process simulator; modified process flow; plasma-assisted deposition; polysilicon; prototype hybrid simulation environment; Circuit simulation; Integrated circuit modeling; Plasma measurements; Plasma simulation; Plasma temperature; Predictive models; Response surface methodology; Semiconductor device modeling; Semiconductor process modeling; Virtual prototyping;
Conference_Titel :
Custom Integrated Circuits Conference, 1993., Proceedings of the IEEE 1993
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0826-3
DOI :
10.1109/CICC.1993.590587
