• DocumentCode
    1814173
  • Title

    Transferred substrate DHBT of ft = 410 GHz and fmax = 480 GHz for traveling wave amplifiers

  • Author

    Kraemer, T. ; Meliani, C. ; Lenk, F. ; Wuerfl, J. ; Traenkle, G.

  • Author_Institution
    Ferdinand-Braun-Inst. fuer Hoechstfrequenztechnik, Berlin
  • fYear
    2008
  • fDate
    25-29 May 2008
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We report a MMIC process in transferred substrate technology. The transistors of 0.8 times 5 mum2 emitter size feature ft = 410 GHz and fmax = 480 GHz at BVceo = 5.5 V. Traveling wave amplifiers of 12 dB broadband gain up to fc = 70 GHz were realized.
  • Keywords
    heterojunction bipolar transistors; travelling wave amplifiers; DHBT; MMIC; broadband gain; double heterojunction bipolar transistors; emitter size feature; frequency 410 GHz; frequency 480 GHz; frequency 70 GHz; gain 12 dB; transferred substrate technology; traveling wave amplifiers; voltage 5.5 V; Broadband amplifiers; Etching; Heterojunction bipolar transistors; Indium phosphide; MMICs; Millimeter wave communication; Millimeter wave technology; Substrates; Thermal conductivity; Wafer bonding; InP heterojunction bipolar transistor; distributed amplifier; millimeter-wave; transferred substrate; wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
  • Conference_Location
    Versailles
  • ISSN
    1092-8669
  • Print_ISBN
    978-1-4244-2258-6
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2008.4702999
  • Filename
    4702999
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1814173